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Molybdenum and tungsten are widely used
as contact materials in silicon controlled rectifiers
diodes, transistors and thyristors (GTO’S). Other
than in specialist applications, molybdenum is now accepted as the first
choice mounting material for power semiconductor devices due to its
significantly lower cost and weight.
The fact that both materials have a
similar coefficient of expansion to silicon combined with high thermal
conductivity makes them an ideal choice, especially in large area power
devices where considerable heat is generated. Further applications include
the use of molybdenum and tungsten as heat sink bases in IC’S, LSI’S and
hybrid circuits.
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